Product and Process Engineering - Delft University of Technology

Fatemeh S. M. Hashemi

Fatemeh Hashemi

Contact details

  • Fatemeh S. M. Hashemi
  • Delft University of Technology
  • Dept. Chemical Engineering - PPE
  • Room E2.320
  • van der Maasweg, 9, Delft, 2629 HZ, The Netherlands
  • F.S.MinayeHashemi@tudelft.nl

Education

  • PhD (2016) - Materials Science and Engineering, Stanford University, USA
  • MS  (2014)  - Materials Science and Engineering, Stanford University, USA
  • MSc (2012) - Physics, École Polytechnique Fédérale de Lausanne (EPFL), Switzerland
  • BSc  (2009) - Physics, Sharif University of Technology, Iran

Research Topics

  • Atomic Layer Deposition (ALD)
  • Area-Selective Atomic Layer Deposition (AS-ALD)
  • Photovoltaics

Selected journal publications (Google Scholar and Scopus)

  • FS Minaye Hashemi, BR Birchansky, SF Bent, Selective Deposition of Dielectrics: Limits and Advantages of Alkanethiol Blocking Agents on Metal-Dielectric Patterns, ACS Appl. Mater. Interfaces, 8 (2016) 33264-33272. [paper]
  • FS Minaye Hashemi, SF Bent, Sequential Regeneration of Self-Assembled Monolayers for Highly Selective Atomic Layer Deposition, Advanced Materials Interfaces, 3 (2016). [paper]
  • WH Kim, FS Minaye Hashemi, AJM Mackus, J Singh, Y Kim, D Bobb-Semple, Y Fan, T Kaufman-Osborn, L Godet, SF Bent, A Process for Topographically Selective Deposition on 3D Nanostructures by Ion Implantation, ACS Nano, 10 (2016) 4451-4458. [paper]
  • FS Minaye Hashemi, C Prasittichai, SF Bent: Self-Correcting Process for High Quality Patterning by Atomic Layer Deposition, ACS Nano, 9 (2015), 8710-8717. [paper]
  • C Prasittichai, KL Pickrahn, FS Minaye Hashemi, DS Bergsman, SF Bent, Improving Area-Selective Molecular Layer Deposition by Selective SAM Removal, ACS Appl. Mater. Interfaces, 6 (2014), 17831–17836. [paper]
  • FS Minaye Hashemi, C Prasittichai, SF Bent: A New Resist for Area Selective Atomic and Molecular Layer Deposition on Metal-Dielectric Patterns, Journal of Physical Chemistry C, 118 (2014) 10957-10962. [paper]
  • FS Minaye Hashemi, S Thombare, AF i Morral, ML Brongersma, PC McIntyre: Effects of surface oxide formation on germanium nanowire band-edge photoluminescence, Appl. Phys. Lett. 102 (2013) 251122. [paper]
  • E Horváth, PR Ribi, FS Minaye Hashemi, L Forróa, A Magrez: Dye metachromasy on titanate nanowires: sensing humidity with reversible molecular dimerization, J. Mater. Chem., 22 (2012) 8778-8784 [paper]
  • P Sangpour, FS Minaye Hashemi, A Moshfegh: Photoenhanced Degradation of Methylene Blue on Cosputtered M:TiO2 (M = Au, Ag, Cu) Nanocomposite Systems: A Comparative Study, Journal of Physical Chemistry C, 114 (2010), 13955–13961. [paper]

Research description

Atomic layer deposition (ALD) is a thin film deposition technique that has attracted increasing interest due to its advantages in controlling the growth process in sub-nanometer scale, conformal coating on structures, uniform deposition of thin films and deposition of variety of materials (including metals, dielectric, sulfides and nitrides). ALD is currently used in various research fields and indutsrial applications, as an approach for building higher efficiency solar cells, more stable catalysts and an enabler of patterning electronic structures with nanoscale dimensions. My research has been focused on using ALD for patterning nano-structures via "Area-selective ALD", to avoid problems associated with lithographic patterning. Area-selective ALD can be used in other fileds such as photovoltaivs and catalysis. Currently I am also working on developing new ALD processes for performing ALD in large scale.

    Area-Selective ALD

Schematics and Auger electron spectroscopy results of AS-ALD using selective etching process 1

Student projects

  • Master Project: ALD Processes for Large-Scale Applications
    Many of the today's commonly-used ALD processes rely on the use of expensive and dangerous precursors. Moreover, moving from the ALD processes used in lab scale to the production scale requires alternative reactor designs and precursors. In collaboration with several other world-leading experts (in industry and academia), we aim to design safe and large-scale ALD processes. As a student, you will be working on developing these ALD processes and testing the applications of the deposited films in different systems.

If you are interested in the topic, please contact me at F.S.MinayeHashemi@tudelft.nl.

. © Delft University of Technology - PPE group 2015